A comparative analysis of characteristics of detector structures fabricated
by means of technology of epitaxial growth of an undoped high-resistive Ga
As layer as well as structures based on SI-GaAs compensated with Cr during
a diffusion process is presented in this work. Advantages and disadvantages
of the proposed methods of formation of high-resistive layers, their elect
rophysical characteristics and properties are examined. Limit parameters of
the detector structures which can be achieved by using a combination of te
chnological methods are analyzed. (C) 2001 Published by Elsevier Science B.