GaAs structures for X-ray imaging detectors

Citation
Gi. Ayzenshtat et al., GaAs structures for X-ray imaging detectors, NUCL INST A, 466(1), 2001, pp. 25-32
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
466
Issue
1
Year of publication
2001
Pages
25 - 32
Database
ISI
SICI code
0168-9002(20010621)466:1<25:GSFXID>2.0.ZU;2-K
Abstract
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive Ga As layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high-resistive layers, their elect rophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of te chnological methods are analyzed. (C) 2001 Published by Elsevier Science B. V.