Modeling of processes of charge division and collection in GaAs detectors taking into account trapping effects

Citation
Gi. Ayzenshtat et al., Modeling of processes of charge division and collection in GaAs detectors taking into account trapping effects, NUCL INST A, 466(1), 2001, pp. 1-8
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
466
Issue
1
Year of publication
2001
Pages
1 - 8
Database
ISI
SICI code
0168-9002(20010621)466:1<1:MOPOCD>2.0.ZU;2-T
Abstract
A mathematical modeling of processes of charge division and collection in G aAs detectors has been carried out. The charge carriers behavior has been d escribed by the system of continuity equations and Poisson's equation. We s tudied a case when semi-insulating (SI) GaAs contains deep centers of only one type with the abrupt cross-section dependence on field. A concentration of empty traps was taken at a level of 10(15)-10(16) cm(-3). All the param eters of deep centers correspond to the EL2 center which is dominant in SI GaAs. Interaction with gamma -rays and electrons were simulated by electron -hole packets of corresponding dimensions. It was shown that dynamics of ch arge division in the case of trapping and without trapping is determined by three factors: (1) the electric field strength value in the region of elec tron-hole pairs creation; (2) a concentration of non-equilibrium charge car riers in that region (i.e. the ionizing radiation type); (3) the region dim ensions. (C) 2001 Published by Elsevier Science B.V.