On boundary condition-induced states in low-dimensional semiconductor structures

Citation
W. Jaskolski et al., On boundary condition-induced states in low-dimensional semiconductor structures, VACUUM, 63(1-2), 2001, pp. 191-196
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042-207X → ACNP
Volume
63
Issue
1-2
Year of publication
2001
Pages
191 - 196
Database
ISI
SICI code
0042-207X(20010702)63:1-2<191:OBCSIL>2.0.ZU;2-C
Abstract
We examine different solutions of multi-band k(.)p Hamiltonians. We refer m ainly to the "intrinsic surface states", with energies in the forbidden ene rgy gap, that were proposed recently (Sercel et al. Phys. Rev. Lett. 83 (19 99) 2394) for bare and capped nanocrystals. We review analytical and numeri cal results for different Hamiltonians and demonstrate that spurious soluti ons occur both for quantum dots and quantum wells. By showing peculiar char acteristics of the proposed gap states, we argue that they are spurious sol utions appearing in multi-band formulations due to infinite potential barri er imposed at the nanocrystal surface. We propose that these states are not physical and should be excluded from the theoretical interpretation of exp erimental data. (C) 2001 Elsevier Science Ltd. All rights reserved.