Electron transport in ferromagnetic small tunnel junctions

Citation
Y. Ootuka et al., Electron transport in ferromagnetic small tunnel junctions, MAT SCI E B, 84(1-2), 2001, pp. 114-119
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
84
Issue
1-2
Year of publication
2001
Pages
114 - 119
Database
ISI
SICI code
0921-5107(20010705)84:1-2<114:ETIFST>2.0.ZU;2-O
Abstract
Both the single-electron charging effect and spin-dependent tunneling are i mportant for electron transport in small tunnel junctions made of ferromagn etic metals. In this paper, we review our experiments on such systems. The hysteretic negative magnetoresistance at low magnetic fields, known as the tunnel magnetoresistance (TMR), is largely enhanced when the Coulomb blocka de takes effect at low temperatures. Although such enhancement is expected to some extent by the quantum fluctuation of charge at strong tunneling reg ime, the quantitative agreement has not been obtained yet. The resistance o f ferromagnetic single-electron transistors (SET) oscillates at high magnet ic fields. A shift of the: chemical potential in magnetic fields by the Zee man effect causes the migration of electrons between the electrodes, which appears as resistance oscillations. Experimental results for various struct ures are consistent with such a model. (C) 2001 Elsevier Science B.V. All r ights reserved.