Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substrates

Troubenko, PA Kozlovsky, VI Yao, T Korostelin, YV Roddatis, VV

Pa. Troubenko et al., Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substrates, J CRYST GR, 227, 2001, pp. 699-704

14

INGLESE

Article

Physical Chemistry/Chemical Physics

JOURNAL OF CRYSTAL GROWTH

0022-0248 → ACNP

227

2001

699 - 704

ISI

0022-0248(200107)227:<699:HDBSGB>2.0.ZU;2-W

ZnCdSe/ZnMgSe and ZnSe/ZnMgBeSe distributed Bragg reflectors have been grow n on ZnSe (1 0 0) substrates by molecular beam epitaxy. Optical and structu ral properties were investigated. A calculation was applied to the design o f II-VI DBRs on ZnSe substrates. The comparison of theoretical and experime ntal reflectivity spectra proposes that the discrepancy of maximum reflecta nce is related to the heterointerface roughness in the non-pseudomorphic sy stem. For the ZnCdSe/ZnMESe system, DBRs contained 10.5 and 20 stacks of al ternated quarter-wavelength layers were obtained. The maximum reflectance w as around 80% at 560 nm for 20 pairs of Zn0.86Cd0.14Se/Zn0.79Mg0.21Se. The ZnSe/ZnMgBeSe DBR structures show the abrupt heterointerface and good smoot hness of surface. The 12 pairs of ZnSe/Zn0.72Mg0.21 Be0.07Se quarter-wavele ngth layers were deposited and maximum reflectance was at 605 nm. The peak position and reflectance correlate well with theoretical prediction. (C) 20 01 Elsevier Science B.V. All rights reserved.