High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAscurrent blocking layer

Citation
Sy. Wang et al., High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAscurrent blocking layer, INFR PHYS T, 42(3-5), 2001, pp. 473-477
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
INFRARED PHYSICS & TECHNOLOGY
ISSN journal
1350-4495 → ACNP
Volume
42
Issue
3-5
Year of publication
2001
Pages
473 - 477
Database
ISI
SICI code
1350-4495(200106/10)42:3-5<473:HPIQDI>2.0.ZU;2-O
Abstract
Low dark current InAs/GaAs quantum dot infrared photodetector (QDIP) is dem onstrated. The dark current reduced for over three orders of magnitude by i ntroducing a thin AlGaAs current blocking layer. This thin AlGaAs can reduc e the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with peak at 6.5 mum and the corresponding detectivity ab out 2.5 x 10(9) cm Hz(1/2/W1/2). It is the highest detectivity reported for QDIP at 77 K. (C) 2001 Published by Elsevier Science B.V.