A detailed study of non-uniform quantum well infrared photodetectors

Citation
Sy. Wang et al., A detailed study of non-uniform quantum well infrared photodetectors, INFR PHYS T, 42(3-5), 2001, pp. 177-184
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
INFRARED PHYSICS & TECHNOLOGY
ISSN journal
1350-4495 → ACNP
Volume
42
Issue
3-5
Year of publication
2001
Pages
177 - 184
Database
ISI
SICI code
1350-4495(200106/10)42:3-5<177:ADSONQ>2.0.ZU;2-S
Abstract
A non-uniform quantum well infrared photodetector (NUQWIP) structure is stu died. By changing the doping concentration and barrier width of each quantu m well, the electric field distribution can be tailored. Different transiti on types of NUQWIPs were fabricated. Suppressed dark current is obtained fo r all the NUQWIPs. The NUQWIPs show excellent performance compared with con ventional uniform structures. The dark current is about an order of magnitu de lower and the background limited temperature increases for 6 degrees. Th e electric field distribution within the structure is calculated to explain the results and characteristics of the NUQWIPs. The NUQWIP is found to be advantageous for the low cutoff energy detectors using B-C transitions. (C) 2001 Published by Elsevier Science B.V.