Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process

Citation
Tw. Kim et al., Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process, APPL PHYS L, 79(1), 2001, pp. 120-122
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
1
Year of publication
2001
Pages
120 - 122
Database
ISI
SICI code
0003-6951(20010702)79:1<120:NAACIO>2.0.ZU;2-D
Abstract
A Ga+ focused ion-beam (FIB) technique utilizing both lithographic and nano particle formation processes has been introduced to create nanocrystals act ing as Coulomb islands at room temperature. High-resolution transmission el ectron microscopy results show that the nanocrystals acting as Coulomb isla nds are created in the source-drain active layer by using a Ga+ FIB. The re sults for the drain current and the conductance as functions of the drain v oltage with an open gate voltage at room temperature show a Coulomb stairca se and conductance oscillations, respectively. Nanoscale particles of Al wi th an amorphous phase are created in the source-drain channel by the defect s due to the radiation effect of the Ga+ FIB, and collisions between Ga+ io ns and Al atoms produce secondary electrons, that interact with the nanopar ticles, which are acting as Coulomb islands, to form the crystal phase. (C) 2001 American Institute of Physics.