Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures

Citation
Tw. Kim et al., Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures, APPL PHYS L, 79(1), 2001, pp. 33-35
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
1
Year of publication
2001
Pages
33 - 35
Database
ISI
SICI code
0003-6951(20010702)79:1<33:MAITPO>2.0.ZU;2-X
Abstract
The transmission electron microscopy image and selected area electron diffr action pattern showed that self-assembled InAs quantum-dot (QD) arrays embe dded in GaAs barriers were periodically inserted in an Al0.25Ga0.75As/GaAs heterostructure. The temperature-dependent photoluminescence spectra of the InAs/GaAs quantum dots embedded in modulation-doped heterostructures showe d interband transitions from the first-excited electronic subband to the fi rst-excited heavy-hole subband together with those from the ground subband to the ground heavy-hole band (E-1-HH1) while the spectra of the InAs/GaAs QDs alone showed only the peak related to the (E-1-HH1) transitions. (C) 20 01 American Institute of Physics.