Electrical and gas-sensing properties of WO3 semiconductor material

Wang, YD Chen, ZX Li, YF Zhou, ZL Wu, XH

Yd. Wang et al., Electrical and gas-sensing properties of WO3 semiconductor material, SOL ST ELEC, 45(5), 2001, pp. 639-644

18

INGLESE

Article

Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing

SOLID-STATE ELECTRONICS

0038-1101 → ACNP

45

5

2001

639 - 644

ISI

0038-1101(200105)45:5<639:EAGPOW>2.0.ZU;2-8

In this paper, the electrical and gas-sensing properties of calcined tungst en trioxide semiconductor materials were investigated. X-ray diffraction, s can electron microscopy and infrared were used to characterize structure an d performance of WO3 semiconductor material. The average grain size of WO3 was 22 nm after calcination at less than 800 degreesC and 24-26 nm at more than 900 degreesC for 1 h. The sensors of indirect heating type were fabric ated. The effects of calcining temperature and operating temperature on ele ctrical resistance and sensitivity, and sensitivity-gas concentration prope rties of the WO3-based sensors were investigated. The sensor based on WO3 e xhibited high sensitivity and good response characteristics to ethanol gas. The electrical properties of WO3 were analyzed and the sensitive mechanism was discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.