Electrical and gas-sensing properties of WO3 semiconductor material

Citation
Yd. Wang et al., Electrical and gas-sensing properties of WO3 semiconductor material, SOL ST ELEC, 45(5), 2001, pp. 639-644
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
0038-1101 → ACNP
Volume
45
Issue
5
Year of publication
2001
Pages
639 - 644
Database
ISI
SICI code
0038-1101(200105)45:5<639:EAGPOW>2.0.ZU;2-8
Abstract
In this paper, the electrical and gas-sensing properties of calcined tungst en trioxide semiconductor materials were investigated. X-ray diffraction, s can electron microscopy and infrared were used to characterize structure an d performance of WO3 semiconductor material. The average grain size of WO3 was 22 nm after calcination at less than 800 degreesC and 24-26 nm at more than 900 degreesC for 1 h. The sensors of indirect heating type were fabric ated. The effects of calcining temperature and operating temperature on ele ctrical resistance and sensitivity, and sensitivity-gas concentration prope rties of the WO3-based sensors were investigated. The sensor based on WO3 e xhibited high sensitivity and good response characteristics to ethanol gas. The electrical properties of WO3 were analyzed and the sensitive mechanism was discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.