Composition and chemical structure characteristics of CNx layers prepared by different plasma assisted techniques

Citation
T. Ujvari et al., Composition and chemical structure characteristics of CNx layers prepared by different plasma assisted techniques, SOL ST ION, 141, 2001, pp. 63-69
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE IONICS
ISSN journal
0167-2738 → ACNP
Volume
141
Year of publication
2001
Pages
63 - 69
Database
ISI
SICI code
0167-2738(200105)141:<63:CACSCO>2.0.ZU;2-G
Abstract
CNx layers were grown on Si (100) wafers and cleaved NaCl (100) slices by r eactive sputtering of graphite in DC nitrogen plasma, by DC and RF magnetro n sputtering of graphite in N-2 or N-2 + Ar mixture, and from C-containing precursors in nitrogen by plasma-enhanced chemical vapour deposition (PECVD ). The chemical structure of the deposited layers was characterised by XPS and FT-IR spectroscopy. DC plasma deposition resulted in layers with high N content, close to CN stoichiometry(x approximate to 1), as determined by X PS. The CNx layers deposited by DC or RF magnetron sputtering contained 22- 32 at.% N (x = 0.3-0.5). For layers prepared by PECVD, N-content varying be tween 20 and 50 at.% was characteristic. The broad and asymmetric C1s and N 1s XPS spectral lines manifested several chemical bonding states of the con stituents. The proportions of the line components varied with the preparati on conditions. Significant differences were also observed in the 1100-1700 cm(-1) region of the FT-IR spectra. Assignment of the two major N1s photoel ectron peak-components was proposed based on the established correlation be tween the FT-LR results, composition and binding energy values measured for magnetron-deposited CNx phases as follows: the N1 at 398.3 eV BE to N=C do uble bonds and N2 at 400.2 eV BE to N-C single bonds. (C) 2001 Elsevier Sci ence B.V. All rights reserved.