Electromotive force generation due to electron and impurity cyclotron resonances in compound semiconductors

Citation
T. Okashita et al., Electromotive force generation due to electron and impurity cyclotron resonances in compound semiconductors, PHYSICA B, 302, 2001, pp. 369-373
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
0921-4526 → ACNP
Volume
302
Year of publication
2001
Pages
369 - 373
Database
ISI
SICI code
0921-4526(200108)302:<369:EFGDTE>2.0.ZU;2-2
Abstract
We report on the resonant-photoelectromagnetic (R-PEM) effect in semiconduc tor, that is the electromotive force generation associated with electron cy clotron resonance (ECR) and impurity cyclotron resonance (ICR). This can be explained with a model that the carriers excited by the resonant absorptio n of the radiation induce the DC voltage through the thermomagnetic process . In this study, we have applied this technique to the nInGaAs thin film an d observed the negative voltage peak in addition to the usual positive ICR one. From the temperature variation and the resonant magnetic field depende nce of these signals, we have concluded that the negative signal is induced by the ECR absorption. In addition, we have confirmed that the inversion o f polarity for these signals originates in the inhomogeneous distribution o f conduction electrons inside the film, and electrons localized at a fracti on of the sample mainly cause the resonant absorption. Through the detailed observation and analysis of the generated DC voltage, we can investigate t he dynamics of hot carriers inhomogeneously excited in the sample by the EC R as well as the TCR. Moreover, if we pay special attention to the polarity of the generated voltage, we can determine the distribution of electrons a nd impurities inside the film. (C) 2001 Elsevier Science B.V. All rights re served.