Particle tracking using CMOS monolithic active pixel sensor

Citation
G. Claus et al., Particle tracking using CMOS monolithic active pixel sensor, NUCL INST A, 465(1), 2001, pp. 120-124
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
465
Issue
1
Year of publication
2001
Pages
120 - 124
Database
ISI
SICI code
0168-9002(20010601)465:1<120:PTUCMA>2.0.ZU;2-5
Abstract
A novel monolithic active pixel sensor for charged particle tracking has be en designed and fabricated in a standard CMOS technology. The device archit ecture is identical to a CMOS camera. recently being proposed as an alterna tive to CCD sensors for visible light imaging. The partially depleted thin epitaxial silicon layer is used as a sensitive detector volume. The sensor is a photodiode having a special structure, which allows the high detection efficiency required for tracking applications A first prototype was made o f four arrays each containing 64 x 64 pixels, with a readout pitch of 20 mu m in both directions. An architecture allowing serial readout of the analog ue information from each pixel has been implemented. To evaluate the tracki ng performance of such a device, series of tests have been performed using a high-energy particle beam. A detailed analysis of the beam test data pres ented in this work demonstrate close to 100% minimum ionising particle dete ction efficiency and a good enough signal-to-noise ratio of more than 30. ( C) 2001 Elsevier Science B,V, All rights reserved.