Silicon pixel sensors for the ATLAS Pixel Detector have been successfully d
eveloped. The main attention for the design was given to survivability in t
he harsh radiation environment of LHC up to a fluence of 10(15)n(eq)/cm(2)
during 10 years of operation. This leads to the need of long term operation
at several hundreds of volts, partially depleted while maintaining good ch
arge collection, small cell size and thin sensors reducing the multiple sca
ttering. Additionally, a bias grid for testing the sensors before assembly
under realistic bias conditions is implemented to allow a quality assurance
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