Nanoscale Coulomb blockade memory and logic devices

Citation
H. Mizuta et al., Nanoscale Coulomb blockade memory and logic devices, NANOTECHNOL, 12(2), 2001, pp. 155-159
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
0957-4484 → ACNP
Volume
12
Issue
2
Year of publication
2001
Pages
155 - 159
Database
ISI
SICI code
0957-4484(200106)12:2<155:NCBMAL>2.0.ZU;2-4
Abstract
This paper gives a brief review of our recent work done in the area of nano metre-scale Coulomb blockade (CB) memory and logic devices, that enable us to realize future electron-number scalability by overcoming inherent proble ms to conventional semiconductor devices. We introduce multiple-tunnel junc tions (MTJs), naturally formed in heavily doped semiconductor nanowires, as a key building block for our CB devices. For memory applications, the hybr id MTJ/MOS cell architecture is described, and its high-speed RAM operation is investigated. For logic applications the binary decision diagram logic is discussed as a suitable architecture for low-gain Mn transistors.