Manufacturing of porous silicon; porosity and thickness dependence on electrolyte composition

Citation
K. Kordas et al., Manufacturing of porous silicon; porosity and thickness dependence on electrolyte composition, APPL SURF S, 178(1-4), 2001, pp. 190-193
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
178
Issue
1-4
Year of publication
2001
Pages
190 - 193
Database
ISI
SICI code
0169-4332(20010702)178:1-4<190:MOPSPA>2.0.ZU;2-G
Abstract
Porous silicon (PS) layers were manufactured by the anodization of silicon (Si) wafers in hydrofluoric acid/ethanol/water (HF/EtOH/H2O) and hydrofluor ic acid/surfactant/water (HF/Decon/H2O) electrolytes. Physical parameters s uch as thickness d) and porosity (p) of the formed PS were determined as th e function of concentrations of HF, EtOH, Decon ([HF], [EtOH] and [Decon], respectively). It was found that higher [HF] decreases, while higher [EtOH] increases the porosity and helps to produce both uniform anodization and P S layers. The thickness of the formed PS films were measured by profilometr y and prooved to be proportional to [HF] and inversly proportional to [EtOH ]. (C) 2001 Elsevier Science B,V. All rights reserved.