ZnO : Zn phosphor thin films prepared by filtered arc deposition

Citation
W. Li et al., ZnO : Zn phosphor thin films prepared by filtered arc deposition, J VAC SCI B, 19(3), 2001, pp. 1004-1007
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
1004 - 1007
Database
ISI
SICI code
1071-1023(200105/06)19:3<1004:Z:ZPTF>2.0.ZU;2-E
Abstract
ZnO:Zn phosphor thin films, which can be used in field emission displays, w ere prepared by filtered are deposition. Depositing parameters, including b ias and temperature of the substrates, duct current and partial pressure of O-2 in the depositing chamber; were varied to synthesize the films. Both d c and rf bias were utilized in the process. The structure, thickness, lumin escent intensity, and morphology of the films were investigated. Most of th e as-deposited films contained both crystalline and amorphous phases. It wa s found that lower bias, lower substrate temperature rf bias, and lower duc t current tended to obtain thicker films. Neither lower: nor higher O-2 con centration in the chamber obtained thicker films. There are two categories of luminescent peaks, the UV/violet emission (370-420 nm) and the blue/gree n light (470-530 nm), in the deposited ZnO:Zn films. An interesting relatio n between PL intensity and morphology was found. Some samples with a specia l type of individual tip-like structures showed stronger luminescence in a magnitude than others. The forming of the tip structures may be due to the bombarding effect of the plasma with high energy during the deposition and that there were less boundaries or defects between the individual tips may account for the stronger luminescence. (C) 2001 American Vacuum Society.