Jd. Lee et al., Fabrication of triode diamond field emitter arrays era glass substrate by anisotropic conductive film bonding, J VAC SCI B, 19(3), 2001, pp. 954-957
Gated pyramid-shaped polycrystalline diamond field emitter arrays (FEAs) we
re, fabricated;by microwave plasma chemical vapor deposition and the transf
er mold technique. The FEAs were fabricated with various standard integrate
d circuit technologies and micromachine electromechanical system technologi
es; thermal:oxidation, chemical wet etch, sputtering, and glass-to-metal bo
nding technique by using anisotropic conductive film (ACF). As a result of
ACF bonding, thin flat film type FEAs were simply realized on an indium tin
oxide coated glass substrate without the necessity of an additional cathod
e contact. Fabricated diamond FEAs were electrically characterized in triod
e configuration and an anode current of 237 nA was obtained at the gate bia
s of 120 V. (C) 2001 American Vacuum Society.