Fabrication of triode diamond field emitter arrays era glass substrate by anisotropic conductive film bonding

Citation
Jd. Lee et al., Fabrication of triode diamond field emitter arrays era glass substrate by anisotropic conductive film bonding, J VAC SCI B, 19(3), 2001, pp. 954-957
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
954 - 957
Database
ISI
SICI code
1071-1023(200105/06)19:3<954:FOTDFE>2.0.ZU;2-5
Abstract
Gated pyramid-shaped polycrystalline diamond field emitter arrays (FEAs) we re, fabricated;by microwave plasma chemical vapor deposition and the transf er mold technique. The FEAs were fabricated with various standard integrate d circuit technologies and micromachine electromechanical system technologi es; thermal:oxidation, chemical wet etch, sputtering, and glass-to-metal bo nding technique by using anisotropic conductive film (ACF). As a result of ACF bonding, thin flat film type FEAs were simply realized on an indium tin oxide coated glass substrate without the necessity of an additional cathod e contact. Fabricated diamond FEAs were electrically characterized in triod e configuration and an anode current of 237 nA was obtained at the gate bia s of 120 V. (C) 2001 American Vacuum Society.