Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures

Citation
Mg. Kim et al., Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures, J KOR PHYS, 38(6), 2001, pp. 750-753
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
38
Issue
6
Year of publication
2001
Pages
750 - 753
Database
ISI
SICI code
0374-4884(200106)38:6<750:VPFPPA>2.0.ZU;2-3
Abstract
We performed visible photoluminescence and scanning electron micrograph mea surements on several porous poly-Si/Si and a-Si/Si structures. We found tha t the porous interfacial layer between the thin film and the substrate dete rmined the optoelectronic properties for the structures. With the results, we present a model for porous structures based on the quantum confinement e ffect in silicon wires; the decreasing emission intensity and the redshift of photoluminescence originate from the silicon wires in the porous interfa ce formed during all electrochemical process.