Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates

Citation
Re. Pritchard et al., Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates, J APPL PHYS, 90(1), 2001, pp. 475-480
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
90
Issue
1
Year of publication
2001
Pages
475 - 480
Database
ISI
SICI code
0021-8979(20010701)90:1<475:OCOGPM>2.0.ZU;2-K
Abstract
Arrays of GaAs pyramids with square (001) bases of length 1-5 mum have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied b y microreflection and microtransmission imaging measurements with light (la mbda =900-1000 nm) incident through the pyramid base. Digitized charge coup led device images indicate that total internal reflection occurs at the {11 0} pyramid facets and that their reflectivities are greater than 80%, provi ded overgrowth of the facets does not occur. These properties suggest that such structures may be suitable as the top mirror in novel micron-scale ver tical microcavity devices. (C) 2001 American Institute of Physics.