The quality homoepitaxial of polycrystalline and thin films of diamond depe
nds on their deposition technics and parameters. The achievement of p- and
n-type doping and their effect land that of hydrogen or oxygen termination)
on the characteristics of elementary electronic components, p-n junction,
Schottky diode, then of pnp, MESFET, MISFET are described and discussed. Th
e use of boron doped polycrystalline diamond films as electrodes is analyze
d in connection with the characteristics of the films. Its main application
s for toxics remediation, electrosynthesis, electroanalysis are described.