Quality, doping, electronic and electrochemical applications of diamond

Citation
A. Deneuville et E. Gheeraert, Quality, doping, electronic and electrochemical applications of diamond, VIDE, 56(300), 2001, pp. 427
Citations number
150
Language
INGLESE
art.tipo
Review
Categorie Soggetti
Material Science & Engineering
Journal title
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
ISSN journal
1266-0167 → ACNP
Volume
56
Issue
300
Year of publication
2001
Database
ISI
SICI code
1266-0167(2001)56:300<427:QDEAEA>2.0.ZU;2-V
Abstract
The quality homoepitaxial of polycrystalline and thin films of diamond depe nds on their deposition technics and parameters. The achievement of p- and n-type doping and their effect land that of hydrogen or oxygen termination) on the characteristics of elementary electronic components, p-n junction, Schottky diode, then of pnp, MESFET, MISFET are described and discussed. Th e use of boron doped polycrystalline diamond films as electrodes is analyze d in connection with the characteristics of the films. Its main application s for toxics remediation, electrosynthesis, electroanalysis are described.