Reduction of defects in GaN on reactive ion beam treated sapphire by annealing

Citation
D. Byun et al., Reduction of defects in GaN on reactive ion beam treated sapphire by annealing, PHYS ST S-B, 228(1), 2001, pp. 315-318
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
0370-1972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
315 - 318
Database
ISI
SICI code
0370-1972(200111)228:1<315:RODIGO>2.0.ZU;2-5
Abstract
Previous studies showed that reactive ion beam (RIB) pretreatment of sapphi re prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition Lit high temperature. Annealing w as performed to obtain the structural change due to the recrystallization o f the remaining amorphous phase, and the effect on the electrical propertie s of the GaN thin film on RIB treated sapphire (0001) substrate. DCXRD spec tra and Hall mobility of the specimen were studied as a function of the ann ealing time at 1000 degreesC in N-2 atmosphere. For the annealed specimen. FWHM of DCXRD decreased and the mobility increased. The annealed specimen w as compared with a not annealed sample by TEM. A decrease of lattice strain and a reduction of the dislocation density about 56-59% was observed. The present results clearly show that the combination of RIB pretreatment and p roper post annealing conditions improve the properties of GaN films grown b y MOCVD.