Temperature-independent stokes shift in an In0.08Ga0.92N epitaxial layer revealed by photoluminescence excitation spectroscopy

Citation
H. Kudo et al., Temperature-independent stokes shift in an In0.08Ga0.92N epitaxial layer revealed by photoluminescence excitation spectroscopy, PHYS ST S-B, 228(1), 2001, pp. 55-58
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
0370-1972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
55 - 58
Database
ISI
SICI code
0370-1972(200111)228:1<55:TSSIAI>2.0.ZU;2-K
Abstract
Optical properties of an In0.08Ga0.92N epitaxial laver have been studied by means of photoluminescence excitation spectroscopy. The photoluminescence spectrum of the In0.08Ga0.92N epitaxial layer was composed of two emission components with an energy separation of 40 meV, Photoluminescence excitatio n measurements allowed us to observe a clear peak due to the absorption of InGaN and to investigate the temperature dependence of the Stokes shift. At 100 K, the Stokes shifts of the higher and lower energy components were es timated to be 44 and 79 meV. respectively. The Stokes shifts were well cons istent with the energy shifts expected from the polaron interaction. The ab sorption peaks for both the higher and lower energy components were located at the same energy position. Furthermore, the Stokes shift of the higher e nergy component was not dependent on temperature and indicated a constant v alue up to room temperature.