This paper reports a novel two-step method for improvement of MOVPE grown I
nN film on GaP(111)B, which includes the growth of a low temperature InN bu
ffer laver and a high temperature epilayer. The additional feature of this
two-step method which distinguishes it from the commonly known two-step met
hod is that after growing the low temperature InN buffer layer the temperat
ure is raised to the epitaxial growth temperature while continuing the grow
th. It is found that a single crystalline InN film with an excellent surfac
e morphology can be grown on GaP(111)B at high temperature (similar to 600
degreesC) by this novel two-step method. In contrast, InN film grown by the
conventional two-step method is found to be very rough. Differences betwee
n these two growth techniques and their influences on the buffer laver and
then on main epilayer are also discussed.