A novel two-step method for improvement of MOVPE grown InN film on GaP(111)B substrate

Citation
Ag. Bhuiyan et al., A novel two-step method for improvement of MOVPE grown InN film on GaP(111)B substrate, PHYS ST S-B, 228(1), 2001, pp. 27-30
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
0370-1972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
27 - 30
Database
ISI
SICI code
0370-1972(200111)228:1<27:ANTMFI>2.0.ZU;2-6
Abstract
This paper reports a novel two-step method for improvement of MOVPE grown I nN film on GaP(111)B, which includes the growth of a low temperature InN bu ffer laver and a high temperature epilayer. The additional feature of this two-step method which distinguishes it from the commonly known two-step met hod is that after growing the low temperature InN buffer layer the temperat ure is raised to the epitaxial growth temperature while continuing the grow th. It is found that a single crystalline InN film with an excellent surfac e morphology can be grown on GaP(111)B at high temperature (similar to 600 degreesC) by this novel two-step method. In contrast, InN film grown by the conventional two-step method is found to be very rough. Differences betwee n these two growth techniques and their influences on the buffer laver and then on main epilayer are also discussed.