Nanometer silicon carbide powder synthesis and its dielectric behavior in the GHz range

Citation
B. Zhang et al., Nanometer silicon carbide powder synthesis and its dielectric behavior in the GHz range, J EUR CERAM, 22(1), 2002, pp. 93-99
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
0955-2219 → ACNP
Volume
22
Issue
1
Year of publication
2002
Pages
93 - 99
Database
ISI
SICI code
0955-2219(200201)22:1<93:NSCPSA>2.0.ZU;2-T
Abstract
In this paper, the dielectric properties of nano-sized SiC powders have bee n investigated in the GHz frequency range. The polytypes of SiC have been c hanged from beta type (3C) to alpha type (12H and 21R) by varying the alumi num contents and the reaction atmospheres. The beta -SiC powder has much hi gher relative permittivity (epsilon (r)' = 30 similar to 50) and loss tange nt (tg delta = similar to 0.7) than alpha -SiC powders. Though the doping o f At and N decrease the resistivity of SiC to the order of 10(2) Omega cm, the pivotal factor on the dielectric behaviors is ion jump and dipole relax ation, namely the reorientation of lattice defect pairs (V-Si-V-C, Si-C-C-S i). The conductivity of SiC has little effect on the dielectric behaviors. (C) 2001 Elsevier Science Ltd. All rights reserved.