Self-consistent theory of pressure on doped Kondo insulators

Authors
Citation
S. Zhang, Self-consistent theory of pressure on doped Kondo insulators, PHYS LETT A, 291(1), 2001, pp. 51-60
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
0375-9601 → ACNP
Volume
291
Issue
1
Year of publication
2001
Pages
51 - 60
Database
ISI
SICI code
0375-9601(20011126)291:1<51:STOPOD>2.0.ZU;2-N
Abstract
The effects of pressure on doped Kondo insulators are studied in the framew ork of slave-boson mean-field theory under the coherent potential approxima tion. A unified picture is presented for both the h-type Kondo insulators ( SmB6 and YbB12) and the e-type Kondo insulators (Ce3Bi4Pt3). The f-electron 's density of states within the whole range of the concentration of nonmagn etic atoms are calculated self-consistently under various pressures. The va riation of the energy gap and the Kondo temperature with pressure are also obtained. These theoretical results can be considered as a possible approac h to study systematically the development of the gap behavior by doping and by mechanical pressure. (C) 2001 Elsevier Science B.V. All rights reserved .