Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor - art. no. 227203

Citation
G. Schmidt et al., Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor - art. no. 227203, PHYS REV L, 8722(22), 2001, pp. 7203
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
0031-9007 → ACNP
Volume
8722
Issue
22
Year of publication
2001
Database
ISI
SICI code
0031-9007(20011126)8722:22<7203:LMEDTS>2.0.ZU;2-1
Abstract
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, i s presented. The effect results from the suppression of a spin channel in t he nonmagnetic semiconductor and can theoretically yield a positive magneto resistance of 100%, when the spin flip length in the nonmagnetic semiconduc tor is sufficiently large. Experimentally, our devices exhibit up to 25% ma gnetoresistance.