Transition temperature of ferromagnetic semiconductors: A dynamical mean field study - art. no. 227202

Citation
A. Chattopadhyay et al., Transition temperature of ferromagnetic semiconductors: A dynamical mean field study - art. no. 227202, PHYS REV L, 8722(22), 2001, pp. 7202
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
0031-9007 → ACNP
Volume
8722
Issue
22
Year of publication
2001
Database
ISI
SICI code
0031-9007(20011126)8722:22<7202:TTOFSA>2.0.ZU;2-C
Abstract
We formulate a theory of doped magnetic semiconductors such as Ga1-xMnxAs w hich have attracted recent attention for their possible use in spintronic a pplications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T-c as a function of magnetic c oupling strength J, carrier density n. and Mn density x. We find that T-c i s determined by a subtle interplay between carrier density and magnetic cou pling.