Strongly enhanced secondary ion emission by molecular ion irradiation

Citation
H. Yamamoto et al., Strongly enhanced secondary ion emission by molecular ion irradiation, J TR MICROP, 19(4), 2001, pp. 571-579
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF TRACE AND MICROPROBE TECHNIQUES
ISSN journal
0733-4680 → ACNP
Volume
19
Issue
4
Year of publication
2001
Pages
571 - 579
Database
ISI
SICI code
0733-4680(2001)19:4<571:SESIEB>2.0.ZU;2-2
Abstract
Strongly enhanced secondary ion emission is observed by irradiation of mole cular ion, SF5+. It is well known that the sputter yield increases signific antly when the solid surface is irradiated by ions at an extremely high flu x, such as in the order of mA/cm(2). In the present study, 4keV SF5+ ions i rradiate a beryllium surface at relatively low flux, 1 muA/cm(2). The Xe+ a nd Ar+ monatomic ions also irradiate at the same condition for comparison. The emitted beryllium and beryllium cluster ions are observed. The ordering of the secondary ion intensities (1) of monatomic Be+ is I(SF5+) > I(Xe+) > I(Ar+). For the SF5+ irradiation, formation of the cluster ions (Be-3(+), Be-6(+)) is also observed. The irradiating molecular ions strongly affect the surface atom emission, since a high-density collision cascade can be fo rmed in the irradiated local area by atoms dissociated from molecular ions. The enhanced cluster formation is also observed by the molecular ion irrad iation.