We formed oxide films on n-type 6H-SiC by an anodic oxidation method. As th
e electrolyte, a mixed solution of ethylene glycol, water and KNO3 was empl
oyed. By applying voltage with constant current to 6H-SiC, an oxide film wa
s formed on the sample. The oxide was easily etched by HF. The formation ra
te for the anodic oxide was much higher than the typical thermal oxidation
rate for 6H-SiC. By using this method for sacrificial oxidation before cont
act formation, Al ohmic contact resistance was reduced compared with those
on an as-received surface.