Sacrificial anodic oxidation of 6H-SiC

Citation
M. Kato et al., Sacrificial anodic oxidation of 6H-SiC, JPN J A P 2, 40(11A), 2001, pp. L1145-L1147
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
11A
Year of publication
2001
Pages
L1145 - L1147
Database
ISI
SICI code
0021-4922(20011101)40:11A<L1145:SAOO6>2.0.ZU;2-4
Abstract
We formed oxide films on n-type 6H-SiC by an anodic oxidation method. As th e electrolyte, a mixed solution of ethylene glycol, water and KNO3 was empl oyed. By applying voltage with constant current to 6H-SiC, an oxide film wa s formed on the sample. The oxide was easily etched by HF. The formation ra te for the anodic oxide was much higher than the typical thermal oxidation rate for 6H-SiC. By using this method for sacrificial oxidation before cont act formation, Al ohmic contact resistance was reduced compared with those on an as-received surface.