Investigation of etch rate uniformity of 60 MHz plasma etching equipment

Citation
A. Koshiishi et al., Investigation of etch rate uniformity of 60 MHz plasma etching equipment, JPN J A P 1, 40(11), 2001, pp. 6613-6618
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
11
Year of publication
2001
Pages
6613 - 6618
Database
ISI
SICI code
0021-4922(200111)40:11<6613:IOERUO>2.0.ZU;2-K
Abstract
When the driving frequency of etching equipment using capacitively coupled parallel-plate plasma (CCP) becomes high, the etch rate tends to indicate a center peak. In this paper we discuss the improvement of the etch rate by leveling the center peak. From the results of numerical simulation using FE M, it can be considered that the center peak shape of the RIF electric fiel d distribution, which is enhanced by the resistivity of plasma, causes the center peak shape of the etch rate. Experimental results using an improved CCP, which possesses the ability to control the electric field distribution , demonstrate a refined etch rate. That is to say, the improvement of makin g a cavity behind the electrode provides the ability to control the electri c field distribution. This distribution is governed by the dimensions of th e cavity and the resistivity Of the electrode. Less than 3% uniformity is o btained at 60 MHz for a wafer of 200 turn diameter using the improved elect rode.