Morphology of silicon oxide film on silicon wafer surface during its removal process in a hydrogen ambient

Citation
M. Mayusumi et al., Morphology of silicon oxide film on silicon wafer surface during its removal process in a hydrogen ambient, JPN J A P 1, 40(11), 2001, pp. 6556-6560
Citations number
34
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
11
Year of publication
2001
Pages
6556 - 6560
Database
ISI
SICI code
0021-4922(200111)40:11<6556:MOSOFO>2.0.ZU;2-C
Abstract
In order to develop the low-temperature silicon epitaxial growth process. t he change in the surface morphology of the silicon dioxide film and the sil icon surface is studied in a transient state, for the first time. at 1223 K at a pressure of 40-101 kPa in a hydrogen ambient. A very smooth and clear silicon substrate surface is achieved using a uniform silicon dioxide film formed using ozonated ultrapure water and a very low flow rate of hydrogen gas. The surface morphology of the silicon substrate finally becomes smoot h and the pit formation is suppressed, although the surface shows a nonunif orm island appearance during the removal of the silicon dioxide film. The m icroroughness of the silicon substrate surface is improved by heating in a hydrogen ambient and by the silicon epitaxial film growth after complete re moval of the ozone oxide film.