InGaAs/InGaAsP quantum well laser at 2.04 mu m for diode spectroscopy of carbon dioxide isotope

Citation
A. Ubukata et al., InGaAs/InGaAsP quantum well laser at 2.04 mu m for diode spectroscopy of carbon dioxide isotope, JPN J A P 1, 40(11), 2001, pp. 6406-6410
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
11
Year of publication
2001
Pages
6406 - 6410
Database
ISI
SICI code
0021-4922(200111)40:11<6406:IQWLA2>2.0.ZU;2-S
Abstract
We demonstrate the utility of a compressively strained InGaAs/InGaAsP laser emitting at 2.05 mum for diode spectroscopy of carbon dioxide isotope ((CO 2)-C-13). By applying a highly compressive strain to and using thick wells in the active layer, the extension of the laser emission wavelength beyond 2.0 mum is achieved. The threshold current is as low as 6 mA at 283 K, and a wave length-tuning rate of 0.016 mn/mA is obtained. A linear maximum powe r per facet of as high as 6 mW is obtained at 283 K. The side mode suppress ion ratio (SMSR) is 34 dB. The applicability of the diode spectroscopy syst em for the measurement of (CO2)-C-13 is also demonstrated. The detection li mit of (CO2)-C-13 is estimated to be less than 2 ppm for the present experi mental setup.