Precipitation in As-ion-implanted and annealed InAs

Authors
Citation
Sj. Kim et H. Han, Precipitation in As-ion-implanted and annealed InAs, JPN J A P 1, 40(11), 2001, pp. 6323-6324
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
11
Year of publication
2001
Pages
6323 - 6324
Database
ISI
SICI code
0021-4922(200111)40:11<6323:PIAAAI>2.0.ZU;2-D
Abstract
Low-energy As-ion-implanted InAs was examined using double-crystal X-ray di ffraction and transmission electron microscopy. For uniform defect distribu tion, multiple implantations were made at 0.05-0.4 MeV with 4 x 10(14)-5 x 10(15) ions/cm(2). After annealing at 600 degreesC for 20 min, As precipita tes were observed, and the implantation-induced strain was significantly re duced, showing the recovery of crystallinity. The density of the As precipi tates was 7.4 x 10(16) cm(-3) and the mean diameter was 55 Angstrom, which corresponds to a volume fraction of 1.1%.