Low-energy As-ion-implanted InAs was examined using double-crystal X-ray di
ffraction and transmission electron microscopy. For uniform defect distribu
tion, multiple implantations were made at 0.05-0.4 MeV with 4 x 10(14)-5 x
10(15) ions/cm(2). After annealing at 600 degreesC for 20 min, As precipita
tes were observed, and the implantation-induced strain was significantly re
duced, showing the recovery of crystallinity. The density of the As precipi
tates was 7.4 x 10(16) cm(-3) and the mean diameter was 55 Angstrom, which
corresponds to a volume fraction of 1.1%.