Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wellsusing nitrogen and arsenic

Citation
K. Ortner et al., Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wellsusing nitrogen and arsenic, APPL PHYS L, 79(24), 2001, pp. 3980-3982
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
24
Year of publication
2001
Pages
3980 - 3982
Database
ISI
SICI code
0003-6951(200112)79:24<3980:GACOPH>2.0.ZU;2-3
Abstract
p-type HgTe/Hg0.3Cd0.7Te(001) quantum wells (QWs) have been grown with mole cular-beam epitaxy (MBE) on Cd0.96Zn0.04Te substrates using modulation dopi ng techniques. Both plasma-excited nitrogen and evaporated cadmium arsenide have been utilized for in situ doping during MBE growth. A comparison of t he electrical and structural properties of QWs fabricated by the two doping techniques has been made. Two-dimensional hole concentrations in nitrogen- doped QWs (up to 1.0x10(12) cm(-2)) were significantly higher than in arsen ic-doped QWs (below 0.5x10(12) cm(-2)). However, by means of a gate-control led Hall bar, hole densities up to 1.1x10(12) cm(-2) have been achieved in the latter system. Hall mobilities up to 1.0x10(5) cm(2)/(V s) have been me asured. Whereas all samples exhibit pronounced although irregular Shubnikov -de Haas oscillations, quantum Hall plateaus in the arsenic-doped samples a re broader and better defined. (C) 2001 American Institute of Physics.