Photoemission spectroscopy of the interface between indium-tin-oxide and copper phthalocyanine for transparent organic light-emitting devices

Citation
N. Isomura et al., Photoemission spectroscopy of the interface between indium-tin-oxide and copper phthalocyanine for transparent organic light-emitting devices, JPN J A P 2, 40(10A), 2001, pp. L1038-L1039
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
10A
Year of publication
2001
Pages
L1038 - L1039
Database
ISI
SICI code
0021-4922(20011001)40:10A<L1038:PSOTIB>2.0.ZU;2-K
Abstract
We investigated chemical and electronic structures of copper phthalocyanine (CuPc) for the electron-injection layer between indium tin oxide (ITO) and emission layers in transparent organic light-emitting devices (TOLEDs). Me tallic Cu or dicopper oxide (Cu2O) is formed at the ITO/CuPc interface as a damaged layer during the sputtering deposition of ITO and plays a signific ant role in efficient electron injection from ITO to the emission layer. So phisticated photoemission experiments revealed that the cause of the format ion of the damaged layer is due to the exposure of CuPc to the oxygen plasm a, while no significant damage is introduced by argon plasma and reaction w ith indium and tin atoms. To achieve efficient TOLEDs, the control of the o xygen plasma is essential.