Structural study of single {111}-facetted CoSi2/Si interface incorporated in a silicon-on-insulator metal-oxide-semiconductor-field-effect-transistor

Citation
T. Ichimori et N. Hirashita, Structural study of single {111}-facetted CoSi2/Si interface incorporated in a silicon-on-insulator metal-oxide-semiconductor-field-effect-transistor, JPN J A P 2, 40(10A), 2001, pp. L1019-L1021
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
10A
Year of publication
2001
Pages
L1019 - L1021
Database
ISI
SICI code
0021-4922(20011001)40:10A<L1019:SSOS{C>2.0.ZU;2-3
Abstract
Metal-oxide-semiconductor field-effect transistors (MOSFETs) with single [1 11}-facetted silicide/silicon joints have been fabricated on silicon-on-ins ulator (SOI) substrates, using cobalt salicide. The interface structure is determined to be {111}Si//{111}CoSi2 and (110)Si//(110)CoSi2 by transmissio n electron microscopy. This report explains the formation mechanism of an a tomically-flat interface, which involves the lateral growth of silicide in the channel direction of the MOSFET. This mechanism also enables the fabric ation of a novel MOSFET structure where the SOI beneath the sidewall is sil icided, which is expected to be a highly effective method for reducing the series resistance.