Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing

Citation
Y. Kimura et al., Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing, JPN J A P 2, 40(10B), 2001, pp. L1103-L1106
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
10B
Year of publication
2001
Pages
L1103 - L1106
Database
ISI
SICI code
0021-4922(20011015)40:10B<L1103:OGAOIL>2.0.ZU;2-I
Abstract
We demonstrate a new technique for the variable stripe length (VSL) method by which the optical gain and optical internal loss of GaN-based laser diod es (LDs) can be directly measured. In the technique, the laser processing i s utilized for varying the excitation length. The excitation length of GaN- based LDs can be varied by directly processing its p-electrode with high-po wer laser irradiation. From the results of the measurements, it was reveale d that the optical internal loss of GaN-based LDs was strongly affected by the layer structure.