Upon Sb desorption from a Sb-saturated Si(100) surface, the c(4 x 4) struct
ure formed at about 0.25 monolayer Sb coverage. The c(4 x 4) reconstruction
has been found to develop best when the surface is slightly contaminated,
plausibly, by carbon. The Si(100)-c(4 x 4)-Sb surface shows up in the high-
resolution filled state scanning tunneling microscopy images as being very
similar to that of the recently reported e(4 x 4)-Si reconstruction. Here t
he main features of the Si(100)-c(4 x 4)-Sb structure are identified and th
e possible atomic arrangement is discussed.