Scanning tunneling microscopy study of the c(4 x 4) structure formation inthe sub-monolayer Sb/Si(100) system

Citation
Aa. Saranin et al., Scanning tunneling microscopy study of the c(4 x 4) structure formation inthe sub-monolayer Sb/Si(100) system, JPN J A P 1, 40(10), 2001, pp. 6069-6072
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
10
Year of publication
2001
Pages
6069 - 6072
Database
ISI
SICI code
0021-4922(200110)40:10<6069:STMSOT>2.0.ZU;2-3
Abstract
Upon Sb desorption from a Sb-saturated Si(100) surface, the c(4 x 4) struct ure formed at about 0.25 monolayer Sb coverage. The c(4 x 4) reconstruction has been found to develop best when the surface is slightly contaminated, plausibly, by carbon. The Si(100)-c(4 x 4)-Sb surface shows up in the high- resolution filled state scanning tunneling microscopy images as being very similar to that of the recently reported e(4 x 4)-Si reconstruction. Here t he main features of the Si(100)-c(4 x 4)-Sb structure are identified and th e possible atomic arrangement is discussed.