We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)(3)O-7 fo
r M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental dat
a indicates single phase samples for the Ga and Cc doping up to 20% level.
Second phases appear in Zn-doped samples when the doping level reaches 0.15
. At 77 K the electrical resistivity of these compounds is several orders o
f magnitude higher than that of undoped Pr123. We also found no orthorhombi
c to tetragonal phase transition in the doped samples with all samples rema
ining in orthorhombic. Their lattices parameters are very close to those of
YBa2Cu3O7-delta (Y123). For this reason these compounds may serve as impro
ved buffer-layer materials for Y123 superconducting electronic circuits and
devices. (C) 2001 Elsevier Science B.V. All rights reserved.