Thermal effect of 0.1 mu m partially depleted SOICMOSFET

Citation
Wk. Yeh et al., Thermal effect of 0.1 mu m partially depleted SOICMOSFET, MICROEL ENG, 59(1-4), 2001, pp. 475-482
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
0167-9317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
475 - 482
Database
ISI
SICI code
0167-9317(200111)59:1-4<475:TEO0MM>2.0.ZU;2-6
Abstract
This work investigates the floating body effect (FBE) on the partially depl eted SOI devices at various temperatures for high-performance 0.1 mum MOSFE T. The thermal effect on the device's characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET wit hout body contacted (FB-SOI). It is found that the threshold voltage (V-th) and the off state drain current (I-OFF) of the BC-SOI devices are more tem perature sensitive than those of the FB-SOI devices. For operation at highe r temperatures, there is no apparent difference in driving capability betwe en the BC-SOI and FB-SOI MOSFETs. (C) 2001 Elsevier Science B.V. All rights reserved.