Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells

Citation
Tw. Kim et al., Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells, J PHYS CH S, 63(1), 2002, pp. 89-93
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
0022-3697 → ACNP
Volume
63
Issue
1
Year of publication
2002
Pages
89 - 93
Database
ISI
SICI code
0022-3697(200201)63:1<89:MAOPOS>2.0.ZU;2-I
Abstract
Transmission electron microscopy (TEM) and photocurrent (PC) measurements w ere carried out to investigate the microstructural and excitonic transition s in In0.52Ga0.48As/In0.55Al0.45As multiple quantum wells (MQWs). TEM image s showed that high-quality 11-period strain-compensated In0.52Ga0.48As/In0. 55Al0.45As MQWs had high-quality heterointerfaces, Based on the TEM results , a possible crystal structure for the In0.52Ga0.48As/In0.55Al0.45As MQWs i s presented, and their strains are compensated. The results for the PC data at 300 K for several applied electric fields showed that several excitonic transitions shifted to longer wavelengths as the applied electric field in creased. These results indicate that the strain-compensated In0.52Ga0.48As/ In0.55Al0.45As MQWs hold promise for electroabsorption modulator devices. ( C) 2001 Elsevier Science Ltd. All rights reserved.