Preparation and properties of SrBi2Ta2O9 ferroelectric thin films using excimer UV irradiation and seed layer

Citation
T. Hayashi et D. Togawa, Preparation and properties of SrBi2Ta2O9 ferroelectric thin films using excimer UV irradiation and seed layer, JPN J A P 1, 40(9B), 2001, pp. 5585-5589
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
9B
Year of publication
2001
Pages
5585 - 5589
Database
ISI
SICI code
0021-4922(200109)40:9B<5585:PAPOSF>2.0.ZU;2-2
Abstract
Low-temperature processing of SrBi2Ta2O9 (SBT) thin films on Pt(200 nm)/Ti( 50 nm)/SiO2/Si substrates was investigated by the sol-gel method. The excim er UV irradiation onto as-deposited SBT thin films at 200-300 degreesC in O -2 atmosphere and the use of a Sr-Ta-O seed layer were very effective in lo wering the crystallization temperature for SBT thin films to 500 degreesC. The SBT thin films prepared by an excimer UV process and subsequent rapid t hermal annealing process with the seed layer showed a homogeneous and smoot h surface microstructure with fine grains of approximately 50 nm in size. T he 600 degreesC-annealed SBT thin films of approximately 200 nm thickness w ith the seed layer exhibited a Pr of 2.3 muC/cm(2) and a Ec of 43 kV/cm.