Preparation of lead zirconate titanate thick films by arc-discharged reactive ion-plating method

Citation
Y. Yasuda et al., Preparation of lead zirconate titanate thick films by arc-discharged reactive ion-plating method, JPN J A P 1, 40(9B), 2001, pp. 5518-5522
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
9B
Year of publication
2001
Pages
5518 - 5522
Database
ISI
SICI code
0021-4922(200109)40:9B<5518:POLZTT>2.0.ZU;2-H
Abstract
Lead zirconate titanate (PZT) thick films of 1 to 3 mum thickness were prep ared by an arc-discharged reactive ion-plating (ADRIP) method. Each PZT thi ck film had a columnar dense structure. The films showed a perovskite singl e phase without any thermal treatment after deposition. A high plasma densi ty of the arc discharge enabled a high deposition rate of more than 3 mum/h . The relative dielectric constant (epsilon (r)) of the PZT thick films, Wi th the Zr/Ti = 53/47 composition was about 2000. This value was almost equi valent to that of PZT bulk ceramics. The films typically showed well-satura ted P-E hysteresis curves with the remanent polarization (P-r) of 44 muC/cm (2) and the coercive field (E-c) of 39kV/cm. The butterfly-shaped property of the displacement curve, which is caused by the bending motion in the ver tical direction on the film surface, was also observed. Furthermore, the PZ T thick films with the (100)-dominant orientation could be obtained by depo siting them onto (100)-preferred PZT thin layers which were prepared by a c hemical solution deposition (CSD) process.