A fast numerical algorithm for heterojunction structures

Citation
Kc. Hwang et al., A fast numerical algorithm for heterojunction structures, INT J ELECT, 88(11), 2001, pp. 1151-1159
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
0020-7217 → ACNP
Volume
88
Issue
11
Year of publication
2001
Pages
1151 - 1159
Database
ISI
SICI code
0020-7217(200111)88:11<1151:AFNAFH>2.0.ZU;2-B
Abstract
In this paper, the two-dimensional electron gas (2DEG) concentration is num erically calculated for single and double heterostructure band profiles by solving Schrodinger's and Poisson's equations self-consistently. An expecte d energy level is introduced to enhance the speed of calculation in obtaini ng quantized energy levels through the iteration process. Conventional AlGa As/GaAs and AlGaAs/InGaAs/GaAs structures are selected to prove the validit y of this calculation. Three different concentrations, namely, positively i onized donors, free electrons in the conduction band and 2DEG, are consider ed through the band profiles. Both the 2DEGs in the narrow bandgap and free electrons in the wide bandgap have been calculated and compared with the d ata available in the literature. Furthermore, positively ionized donors are also obtained and correlated with 2DEG and free electrons to predict the g ate capacitance characteristics of the devices, and showed good agreement w ith the experimental data.