Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots

Citation
Pb. Joyce et al., Surface morphology evolution during the overgrowth of large InAs-GaAs quantum dots, APPL PHYS L, 79(22), 2001, pp. 3615-3617
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
22
Year of publication
2001
Pages
3615 - 3617
Database
ISI
SICI code
0003-6951(20011126)79:22<3615:SMEDTO>2.0.ZU;2-6
Abstract
The effects of GaAs overgrowth on the structural properties of large low-gr owth-rate InAs quantum dots (LGR-QDs) grown on GaAs(001) are examined using in situ scanning tunneling microscopy. Strongly anisotropic surface diffus ion produces a characteristic valley-ridge structure above the LGR-QDs and the surface is not planarized even after a cap thickness > 400 Angstrom. Th e evolution of surface morphology proceeds very differently to the case of smaller conventional growth rate QDs capped under the same conditions, due to the different initial strain states of the QDs. (C) 2001 American Instit ute of Physics.