Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistanceratio: Evidence of Berry phase effect - art. no. 174415

Citation
Hc. Yang et al., Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistanceratio: Evidence of Berry phase effect - art. no. 174415, PHYS REV B, 6417(17), 2001, pp. 4415
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6417
Issue
17
Year of publication
2001
Database
ISI
SICI code
0163-1829(20011101)6417:17<4415:AHEONF>2.0.ZU;2-A
Abstract
The transverse Hall resistivity, rho (xy), and magnetization, M, of [110] a nd [100] oriented epitaxial Nd0.7Sr0.3MnO3 films with large magnetoresistan ce were measured as a function of temperature and applied magnetic field to study the ordinary and spontaneous Hall coefficients. In the ferromagnetic regime, 100K <T<200 K, (-R-s/R-o)x T was found to be proportional to exp(- E-c/k(B)T), where R-s is the spontaneous Hall coefficient. R-o is the ordin ary Hall coefficient, and E-c is the core energy of the magnetic dipole. In addition, R-s was found to be proportional to rho (2)(xx), in the low-temp erature regime (T<160 K) where the ordinary Hall coefficient, R-o, is indep endent of temperature. A scaling behavior, R-s<proportional to>rho (xx) was observed at high temperatures (T>160K). Hall effects of [110] and [100] or iented films are compared to each other. The results are discussed in terms of the exiting theories.