Wafer bonding for integrated materials

Authors
Citation
Qy. Tong, Wafer bonding for integrated materials, MAT SCI E B, 87(3), 2001, pp. 323-328
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
323 - 328
Database
ISI
SICI code
0921-5107(200112)87:3<323:WBFIM>2.0.ZU;2-6
Abstract
Wafer bonding and layer transfer technology has emerged as one of the funda mental technologies for the fabrication of integrated materials. In this pa per, we will first discuss the basics and the generic nature of the wafer d irect bonding process in terms of inter-molecular forces, surface mechanics and chemistry, interface reactions and bonding procedures. Based on the un derstanding of wafer bonding process, innovative low temperature wafer bond ing technologies that operate at wafer level in ambient conditions have bee n developed to facilitate the integration of almost any materials that are similar or dissimilar. Room temperature chemical bonding and low temperatur e epitaxial or hetero-epitaxial-like bonding approaches are introduced. Fin ally, examples of integrated materials prepared by wafer bonding and layer transfer are presented. (C) 2001 Elsevier Science B.V. All rights reserved.