Epitaxial growth of praseodymium oxide on silicon

Citation
Hj. Osten et al., Epitaxial growth of praseodymium oxide on silicon, MAT SCI E B, 87(3), 2001, pp. 297-302
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
297 - 302
Database
ISI
SICI code
0921-5107(200112)87:3<297:EGOPOO>2.0.ZU;2-4
Abstract
Praseodymium oxide is a potential high-K dielectric with promising electric al properties. Here, we present results for crystalline growth of prascodym ium oxide on Si. On Si(001) surfaces, crystalline Pr2O3 grows as (110) doma ins, with two orthogonal in-plane orientations. Epitaxial silicon overgrowt h seems to be impossible. We obtain perfect epitaxial growth on Si(111). Th ese layers can also be overgrown epitaxially with silicon. All layer growth experiments were performed using solid source molecular beam epitaxy. In a ddition, the initial stages of growth were studied by scanning tunneling mi croscopy. (C) 2001 Elsevier Science B.V. All rights reserved.