Thin films of perovskite-type oxide SrTiO3 have been grown epitaxially on S
i(001) substrates using molecular beam epitaxy. Using reflection high energ
y electron diffraction (RHEED) we have determined the optimum growth condit
ions for these type of oxides directly on silicon. Also, observations of RH
EED during growth and X-ray diffraction (XRD) analysis indicate that high q
uality heteroepitaxy on Si takes place with SrTiO3(001)//Si(001) and SrTiO3
//Si. Thin SrTiO3 layers grown directly on Si were used as the ga
te dielectric for the fabrication of MOSFET devices. An effective oxide thi
ckness < 10 Angstrom has been obtained for a 110 Angstrom thick SrTiO3 diel
ectric film with the interface state density around 6.4 x 10(10) cm(-2) eV(
-1), and the inversion layer carrier mobilities of 220 and 62 cm(2) V-1 s(-
1) for NMOS and PMOS devices, respectively. (C) 2001 Elsevier Science B.V.
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