Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

Citation
R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
292 - 296
Database
ISI
SICI code
0921-5107(200112)87:3<292:DOHDCE>2.0.ZU;2-Y
Abstract
Thin films of perovskite-type oxide SrTiO3 have been grown epitaxially on S i(001) substrates using molecular beam epitaxy. Using reflection high energ y electron diffraction (RHEED) we have determined the optimum growth condit ions for these type of oxides directly on silicon. Also, observations of RH EED during growth and X-ray diffraction (XRD) analysis indicate that high q uality heteroepitaxy on Si takes place with SrTiO3(001)//Si(001) and SrTiO3 [010]//Si[110]. Thin SrTiO3 layers grown directly on Si were used as the ga te dielectric for the fabrication of MOSFET devices. An effective oxide thi ckness < 10 Angstrom has been obtained for a 110 Angstrom thick SrTiO3 diel ectric film with the interface state density around 6.4 x 10(10) cm(-2) eV( -1), and the inversion layer carrier mobilities of 220 and 62 cm(2) V-1 s(- 1) for NMOS and PMOS devices, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.